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    產品與服務
    SiC

    碳化硅肖特基二極管(SiC Schottky Barrier Diode,SiC SBD)

     

    型 號 IF(AV) VRRM VRSM VDC QC IFSM IFRM Ptot TJ VF IR C 封裝形式
    @TJ
    =25℃
    @TJ=25℃ @TJ=25℃ @TJ=25℃,f=1MHz
    Pulse:tp
    =10µs
    @IF(AV) @VRRM @VR
    =0V
    @VR
    =400V
    @VR
    =800V
    @VR
    =1000V
    A V V V nC A A W V μA PF PF PF PF
    tPower-
    SS01•
    JB0BA6E
    20 650 650 650 82.5 -55~+175 2.3 26.3 1900.0 120.0 88.6 TO-247-2L
    tPower-
    SS01•
    JB0XX6E
    20 650 650 650 -55~+175 1.7 26.3
    tPower-
    SS01•
    JC0BA12
    30 1200 1200 1200 180.0 -55~+175 1.37 25 TO-247-2L
    tPower-
    SS01•
    JB5BA17
    25 1700 1700 1700 203 -55~+175 1.39 76.1 3190.0 151.0 139.0 TO-247-2L
    tPower-
    SS01•
    JB5XX17
    25 1700 1700 1700 -55~+175 1.43 76.1
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